The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2009

Filed:

Oct. 27, 2006
Applicants:

Tatyana N. Andryushchenko, Portland, OR (US);

Anne E. Miller, Portland, OR (US);

Inventors:

Tatyana N. Andryushchenko, Portland, OR (US);

Anne E. Miller, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a metal interconnect for an integrated circuit includes depositing a barrier layer on a dielectric layer having a trench formed therein, depositing an adhesion layer on the barrier layer, depositing a metal layer on the adhesion layer, removing the metal layer using a CMP process until at least a portion of the adhesion layer is exposed, and removing portions of the adhesion layer and the barrier layer sited substantially outside of the trench using a dissolution process. The dissolution process applies an electrolyte solution to those portions of the adhesion layer and the barrier layer sited substantially outside of the trench to dissolve and remove them.


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