The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Sep. 30, 2004
Ronald G. Filippi, Wappingers Falls, NY (US);
Roy C. Iggulden, Newburgh, NY (US);
Edward W. Kiewra, Verbank, NY (US);
Ping-chuan Wang, Hopewell Junction, NY (US);
Ronald G. Filippi, Wappingers Falls, NY (US);
Roy C. Iggulden, Newburgh, NY (US);
Edward W. Kiewra, Verbank, NY (US);
Ping-Chuan Wang, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of forming a gas dielectric structure for a semiconductor structure by using a sacrificial layer. In particular, one embodiment of the invention includes forming an opening for semiconductor structure in a dielectric layer on a substrate; depositing a sacrificial layer over the opening; performing a directional etch on the sacrificial layer to form a sacrificial layer sidewall on the opening; depositing a conductive liner over the opening; depositing a metal in the opening; planarizing the metal and the conductive liner; removing the sacrificial layer sidewall to form a void; and depositing a cap layer over the void to form the gas dielectric structure. The invention is easily implemented in damascene wire formation processes, and improves structural stability.