The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Dec. 01, 2005
Linda T. Romano, Sunnyvale, CA (US);
Shahriar Mostarshed, San Mateo, CA (US);
Linda T. Romano, Sunnyvale, CA (US);
Shahriar Mostarshed, San Mateo, CA (US);
Nanosys, Inc., Palo Alto, CA (US);
Abstract
The present invention provides processes for producing horizontal nanowires that are separate and oriented and allow for processing directly on a substrate material. The nanowires grow horizontally by suppressing vertical growth from a nucleating particle, such as a metal film. The present invention also provides for horizontal nanowire growth from nucleating particles on the edges of nanometer-sized steps. Following processing, the nanowires can be removed from the substrate and transferred to other substrates. The present invention also provides for nanowires produced by these processes and electronic devices comprising these nanowires. The present invention also provides for nanowire growth apparatus that provide horizontal nanowires, and processes for producing nanowire devices.