The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Mar. 17, 2006
David K. Carlson, San Jose, CA (US);
Satheesh Kuppurao, San Jose, CA (US);
Errol Antonio C. Sanchez, Tracy, CA (US);
Howard Beckford, San Jose, CA (US);
Yihwan Kim, Milpitas, CA (US);
David K. Carlson, San Jose, CA (US);
Satheesh Kuppurao, San Jose, CA (US);
Errol Antonio C. Sanchez, Tracy, CA (US);
Howard Beckford, San Jose, CA (US);
Yihwan Kim, Milpitas, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.