The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Mar. 30, 2006
Holger Ruething, Munich, DE;
Hans-joachim Schulze, Ottobrunn, DE;
Franz-josef Niedernostheide, Muenster, DE;
Frank Hille, Munich, DE;
Holger Ruething, Munich, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Franz-Josef Niedernostheide, Muenster, DE;
Frank Hille, Munich, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A reverse conducting insulated gate bipolar transistor (IGBT) includes a semiconductor substrate having a front side and a back side and a first conductivity region between the front and back sides. The first conductivity region includes a reduced lifetime zone, a first lifetime zone between the reduced lifetime zone and the front side, and an intermediate lifetime zone between the reduced lifetime zone and the back side. Charge carriers in the first lifetime zone have a first carrier lifetime, charge carriers in the reduced lifetime zone have a reduced carrier lifetime shorter than the first carrier lifetime, and charge carriers in the intermediate lifetime zone have an intermediate carrier lifetime shorter than the first carrier lifetime and longer than the reduced carrier lifetime.