The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Dec. 26, 2006
Hiroshi Itokawa, Yokohama, JP;
Yoshimasa Kawase, Yokohama, JP;
Toshihiko Iinuma, Yokohama, JP;
Haruko Akutsu, Yokosuka, JP;
Kyoichi Suguro, Yokohama, JP;
Hiroshi Itokawa, Yokohama, JP;
Yoshimasa Kawase, Yokohama, JP;
Toshihiko Iinuma, Yokohama, JP;
Haruko Akutsu, Yokosuka, JP;
Kyoichi Suguro, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device manufacturing method is disclosed. A silicon-containing gate electrode is first formed above the surface of a silicon-containing semiconductor substrate. Then, a sidewall insulating film is formed on the sidewall of the gate electrode and a film of metal is formed on the semiconductor substrate to cover the gate electrode and the sidewall insulating film. The front and back sides of the semiconductor substrate are heated through heat conduction by an ambient gas. Thereby, the metal is caused to react with silicon contained in the semiconductor substrate and the gate electrode to form a metal silicide film.