The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Feb. 27, 2007
Jong-kyu Kim, Seoul, KR;
Sang-sup Jeong, Suwon-si, KR;
Sung-gil Choi, Yongin-si, KR;
Kuk-han Yoon, Yongin-si, KR;
Bum-soo Kim, Incheon, KR;
Jong-Kyu Kim, Seoul, KR;
Sang-Sup Jeong, Suwon-si, KR;
Sung-Gil Choi, Yongin-si, KR;
Kuk-Han Yoon, Yongin-si, KR;
Bum-Soo Kim, Incheon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a method of forming a contact structure, first and second conductive structures may be formed on a lower structure to be spaced from each other. An insulating layer may be formed on the lower structure to cover the first and second conductive structures. A first hole exposing the first conductive structure may be formed through the insulating layer. A spacer may be formed on a sidewall of the first hole. A first contact electrically coupled to the first conductive structure may be formed in the first hole having the sidewall on which the spacer is formed. A portion of the insulating layer located between the spacers may be removed to form a second hole exposing the second conductive structure. A second contact electrically coupled to the second conductive structure may be formed in the second hole.