The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Jun. 13, 2006
Mahalingam Nandakumar, Richardson, TX (US);
Amitabh Jain, Allen, TX (US);
Lahir Shaik Adam, Plano, TX (US);
Mahalingam Nandakumar, Richardson, TX (US);
Amitabh Jain, Allen, TX (US);
Lahir Shaik Adam, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Formation of an NMOS transistor is disclosed, where at least one of carbon, atomic fluorine and molecular fluorine (F) are combined with implantations of at least one of arsenic, phosphorous and antimony. The dopant combinations can be used in LDD implantations to form source/drain extension regions, as well as in implantations to form halo regions and/or source/drain regions. The combinations of dopants help to reduce sheet resistance and increase carrier mobility, which in turn facilitates device scaling and desired device performance.