The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Apr. 04, 2007
Applicant:
Tsu-jae King, Fremont, CA (US);
Inventor:
Tsu-Jae King, Fremont, CA (US);
Assignee:
Synopsys, Inc., Mountain View, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A variety of processes are disclosed for controlling NDR characteristics for an NDR element, such as peak-to-valley ratio (PVR), NDR onset voltage (V) and related parameters. The processes are based on conventional semiconductor manufacturing operations so that an NDR device can be fabricated using silicon based substrates and along with other types of devices.
King, Tsu-Jae. (2009). Process for controlling performance characteristics of a negative differential resistance (ndr) device (U.S. Patent No. 7557009). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7557009
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile