The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
May. 05, 2006
Katsuyuki Moriya, Azumino, JP;
Toshimitsu Hirai, Chino, JP;
Katsuyuki Moriya, Azumino, JP;
Toshimitsu Hirai, Chino, JP;
Seiko Epson Corporation, , JP;
Abstract
A method for manufacturing a thin film transistor which includes forming precursors of a first and second bank corresponding to a region to form gate, source, and drain electrodes on the substrate with one of a polysilazane liquid, a polysilane liquid, and a polysiloxane liquid by using a droplet discharge method; firing the precursor of the first and second banks to form the first and banks an inorganic layer having polysiloxane as a skeleton; providing a functional liquid to a region partitioned by the first bank to form the gate electrode; forming a semiconductor layer immediately above the gate electrode in a region partitioned by the second bank with an insulation film between; and providing a functional liquid to a region partitioned by the second bank to form the source electrode and the drain electrode, which are coupled to the semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile