The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Jan. 31, 2005
Ming-dou Ker, Chutung, Hsinchu, TW;
Tang-kui Tseng, Chutung, Hsinchu, TW;
Hsin-chin Jiang, Chutung, Hsinchu, TW;
Chyh-yih Chang, Chutung, Hsinchu, TW;
Jeng-jie Peng, Chutung, Hsinchu, TW;
Ming-Dou Ker, Chutung, Hsinchu, TW;
Tang-Kui Tseng, Chutung, Hsinchu, TW;
Hsin-Chin Jiang, Chutung, Hsinchu, TW;
Chyh-Yih Chang, Chutung, Hsinchu, TW;
Jeng-Jie Peng, Chutung, Hsinchu, TW;
Other;
Abstract
An electrostatic discharge protection device that includes a semiconductor substrate of a first dopant type, at least one source/drain pair of a second dopant type formed in the substrate, wherein the source/drain pair is separated to define a channel region therebetween, a lightly-doped region of the first dopant type defined between the source/drain pair and including at least a portion of the channel region, a gate dielectric layer formed over the substrate, and a gate formed over the gate dielectric layer and above the channel region.