The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Mar. 14, 2006
Isamu Asano, Tokyo, JP;
Tsuyoshi Kawagoe, Tokyo, JP;
Kiyoshi Nakai, Tokyo, JP;
Yukio Fuji, Tokyo, JP;
Kazuhiko Kajigaya, Tokyo, JP;
Isamu Asano, Tokyo, JP;
Tsuyoshi Kawagoe, Tokyo, JP;
Kiyoshi Nakai, Tokyo, JP;
Yukio Fuji, Tokyo, JP;
Kazuhiko Kajigaya, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A memory device in which both DRAM and phase-change memory (PCRAM) are mounted is provided with a DRAM bit line, a PCRAM bit line or a PCRAM source line formed on an conductive layer shared with the DRAM bit line, and a sense amplifier connected between the DRAM bit line and the PCRAM bit line. The memory device further has a capacitive element disposed on the upper layer of the DRAM bit line, and a phase-change element disposed on the upper layer of the PCRAM bit line. The lower electrode of the capacitive element and the lower electrode of the phase-change memory element are formed on the shared conductive layer.