The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Jun. 01, 2006
Kyoung Bong Rouh, Gyeonggi-do, KR;
Seung Woo Jin, Gyeonggi-do, KR;
Min Yong Lee, Seoul, KR;
Yong Soo Jung, Seoul, KR;
Kyoung Bong Rouh, Gyeonggi-do, KR;
Seung Woo Jin, Gyeonggi-do, KR;
Min Yong Lee, Seoul, KR;
Yong Soo Jung, Seoul, KR;
Hynix Semiconductor Inc., Icheon-shi, KR;
Abstract
An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the initial ion beam for a second time, a beam line for accelerating the ion beam having passed through the ion beam generator, and an end station for arranging a wafer therein to allow the ion beam accelerated by the beam line to be implanted in the wafer, the end station operating to move the wafer in a direction perpendicular to an ion beam implantation direction, so as to implant the bundled ion beam in a first region of the wafer and the initial ion beam in a second region of the wafer.