The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2009

Filed:

Dec. 11, 2006
Applicants:

Yongki Min, Phoenix, AZ (US);

Huankiat Seh, Phoenix, AZ (US);

Inventors:

Yongki Min, Phoenix, AZ (US);

Huankiat Seh, Phoenix, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A microelectronic device, a method of fabricating the device, and a system including the device. The method includes: providing a substrate including an underlying conductive layer and a polymer build-up layer overlying the underlying conductive layer; providing a passive microelectronic structure; embedding the passive structure in the polymer build-up layer of the substrate; and patterning the passive structure after embedding, patterning including over-etching the bottom electrode layer. The passive microelectronic structure being embedded includes an unpatterned bottom electrode layer; an unpatterned capacitor dielectric layer overlying the bottom electrode layer; and an unpatterned top electrode layer overlying the capacitor dielectric layer.


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