The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Apr. 04, 2007
Ming-ren Tsai, Sanchong, TW;
Chen-fu Hsu, Taichung, TW;
Ming-Ren Tsai, Sanchong, TW;
Chen-Fu Hsu, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A lateral double diffused metal oxide semiconductor (LDMOS) device includes a gate to control the device, a drain coupled to the gate formed in a well of a first type, a source to form a current path with the drain, and a first field oxide region disposed between the gate and the drain. The gate is formed over a first portion of the well of the first type and a channel portion of the well of the second type. The LDMOS also includes a second field oxide region, which is disposed between the edges of the drain and the well of the second type. A dummy polysilicon layer, which is formed to cover approximately one half of the second field oxide with a remaining portion of the dummy polysilicon layer covering a second portion of the well of the second type, reduces the electric field in the drift region.