The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Mar. 16, 2007
Ming-sang Kwan, San Leandro, CA (US);
Bradley Marc Davis, Mountain View, CA (US);
Jean Yee-mei Yang, Glendale, CA (US);
Zhizheng Liu, San Jose, CA (US);
Yi He, Fremont, CA (US);
Ming-Sang Kwan, San Leandro, CA (US);
Bradley Marc Davis, Mountain View, CA (US);
Jean Yee-Mei Yang, Glendale, CA (US);
Zhizheng Liu, San Jose, CA (US);
Yi He, Fremont, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
The present invention pertains to implementing a dual poly process in forming a transistor based memory device. The process allows a first polysilicon layer to be selectively doped subsequent to deposition of the second polysilicon layer. The doping increases the conductivity of the first polysilicon layer which can achieve a more robust charging protection for multi-bit core array and a more uniform distribution of charge.