The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Aug. 06, 2003
Nobuhiko Noto, Annaka, JP;
Masato Yamada, Annaka, JP;
Shinji Nozaki, Kawasaki, JP;
Kazuo Uchida, Tokyo, JP;
Hiroshi Morisaki, Tsurugashima, JP;
Nobuhiko Noto, Annaka, JP;
Masato Yamada, Annaka, JP;
Shinji Nozaki, Kawasaki, JP;
Kazuo Uchida, Tokyo, JP;
Hiroshi Morisaki, Tsurugashima, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A light-emitting devicehas ITO transparent electrode layersused for applying drive voltage for light-emission to a light-emitting layer section, and is designed so as to extract light from the light-emitting layer sectionthrough the ITO transparent electrode layers. The light-emitting devicealso has contact layers composed of In-containing GaAs, formed between the light-emitting layer sectionand the ITO transparent electrode layers, so as to contact with the ITO transparent electrode layers respectively. The contact layersare formed by annealing a stackobtained by forming GaAs layerson the light-emitting layer section, and by forming the ITO transparent electrode layersso as to contact with the GaAs layersto thereby allow In to diffuse from the ITO transparent electrode layersinto the GaAs layersThis provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.