The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2009

Filed:

Dec. 28, 2005
Applicants:

Kerry D. Tedrow, Folsom, CA (US);

Dung Nguyen, Folsom, CA (US);

BO LI, Folsom, CA (US);

Rezaul Haque, Folsom, CA (US);

Ahsanur Rahman, Rancho Cordova, CA (US);

Saad P. Monasa, Sacramento, CA (US);

Matthew Goldman, Terre Haute, IN (US);

Inventors:

Kerry D. Tedrow, Folsom, CA (US);

Dung Nguyen, Folsom, CA (US);

Bo Li, Folsom, CA (US);

Rezaul Haque, Folsom, CA (US);

Ahsanur Rahman, Rancho Cordova, CA (US);

Saad P. Monasa, Sacramento, CA (US);

Matthew Goldman, Terre Haute, IN (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multi-level cell memory device performs a read by providing a stepped voltage waveform on a wordline, and comparing cell currents to a substantially constant reference current. Prior to the application of the stepped voltage waveform, the wordline may share charge with another circuit node.


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