The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
May. 15, 2006
Shoko Kikuchi, Tokyo, JP;
Naoki Yasuda, Yokohama, JP;
Koichi Muraoka, Sagamihara, JP;
Yukie Nishikawa, Kawasaki, JP;
Hirotaka Nishino, Yokohama, JP;
Shoko Kikuchi, Tokyo, JP;
Naoki Yasuda, Yokohama, JP;
Koichi Muraoka, Sagamihara, JP;
Yukie Nishikawa, Kawasaki, JP;
Hirotaka Nishino, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes a tunnel insulating film, a floating gate electrode, an inter-electrode insulating film, and a control gate electrode. The tunnel insulating film is formed on a selected part of a surface of a semiconductor substrate. The floating gate electrode is formed on the tunnel insulating film. At least that interface region of the floating gate electrode, which is opposite to the substrate, is made of n-type Si or metal-based conductive material. The inter-electrode insulating film is formed on the floating gate electrode and made of high-permittivity material. The control gate electrode is formed on the inter-electrode insulating film. At least that interface region of the control gate electrode, which is on the side of the inter-electrode insulating film, is made of a p-type semiconductor layer containing at least one of Si and Ge.