The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2009

Filed:

Sep. 13, 2005
Applicants:

Genichi Komuro, Kawasaki, JP;

Kenji Kiuchi, Kawasaki, JP;

Inventors:

Genichi Komuro, Kawasaki, JP;

Kenji Kiuchi, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device manufacturing method, includes a step of forming a first alumina film (underlying insulating film)on a semiconductor substrate, a step of forming a first conductive film, a ferroelectric film, and a second conductive filmin sequence on the first alumina film, a step of forming a mask material filmon the second conductive film, a step of shaping the mask material filminto an auxiliary mask, a step of shaping the second conductive filminto an upper electrodeby an etching using the auxiliary maskand a first resist patternas a mask, a step of shaping the ferroelectric filminto a capacitor dielectric filmby patterning, and a step of shaping the first conductive filminto a lower electrodeby patterning, whereby a capacitor Q is constructed by the lower electrode, the capacitor dielectric film, and the upper electrode


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