The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Jan. 30, 2007
Dureseti Chidambarrao, Weston, CT (US);
William K. Henson, Poughkeepsie, NY (US);
Kern Rim, Yorktown Heights, NY (US);
William C. Wille, Red Hook, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
William K. Henson, Poughkeepsie, NY (US);
Kern Rim, Yorktown Heights, NY (US);
William C. Wille, Red Hook, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for engineering stress in the channels of MOS transistors of different conductivity using highly stressed nitride films in combination with selective semiconductor-on-insulator (SOI) device architecture is described. A method of using compressive and tensile nitride films in the shallow trench isolation (STI) process is described. High values of stress are achieved when the method is applied to a selective SOI architecture.