The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2009

Filed:

May. 13, 2005
Applicants:

Yusuke Nagai, Tokyo, JP;

Toshiyuki Tateishi, Tokyo, JP;

Tadato Nagasawa, Tokyo, JP;

Inventors:

Yusuke Nagai, Tokyo, JP;

Toshiyuki Tateishi, Tokyo, JP;

Tadato Nagasawa, Tokyo, JP;

Assignee:

Disco Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B26F 3/00 (2006.01); H01L 21/66 (2006.01); H01L 21/20 (2006.01); B23K 26/38 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of dividing a wafer along a plurality of first dividing lines and a plurality of second dividing lines intersecting with the first dividing lines on the surface of the wafer. The method includes an internal deteriorated layer forming step for forming a deteriorated layer in the inside of the wafer along both the first dividing lines and the second dividing lines by applying a laser beam along the first dividing lines and the second dividing lines. It also includes an intersection deteriorated layer forming step for forming a deteriorated layer thicker than the deteriorated layer formed in the internal deteriorated layer forming step by applying a laser beam to intersection areas between the first and second dividing lines. Thereafter, a dividing step divides the wafer into individual chips along the first and second dividing lines by exertion of external force to the wafer.


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