The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2009

Filed:

Oct. 06, 2005
Applicants:

Doo-hoon Goo, Gyeonggi-do, KR;

Han-ku Cho, Gyeonggi-do, KR;

Joo-tae Moon, Gyeonggi-do, KR;

Sang-gyun Woo, Gyeonggi-do, KR;

Gi-sung Yeo, Seoul, KR;

Kyoung-yun Baek, Gyeonggi-do, KR;

Inventors:

Doo-Hoon Goo, Gyeonggi-do, KR;

Han-Ku Cho, Gyeonggi-do, KR;

Joo-Tae Moon, Gyeonggi-do, KR;

Sang-Gyun Woo, Gyeonggi-do, KR;

Gi-Sung Yeo, Seoul, KR;

Kyoung-Yun Baek, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 271/108 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device may include a substrate having a plurality of active regions and a field isolation layer on the substrate surrounding the active regions of the substrate. Each of the plurality of active regions may have a length in a direction of a first axis and a width in a direction of a second axis, and the length may be greater than the width. The plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis, and active regions of adjacent columns may be offset in the direction of the second axis.


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