The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Dec. 22, 2006
Patrick N. Grillot, San Jose, CA (US);
Nathan F. Gardner, Sunnyvale, CA (US);
Werner K. Goetz, Palo Alto, CA (US);
Linda T. Romano, Sunnyvale, CA (US);
Patrick N. Grillot, San Jose, CA (US);
Nathan F. Gardner, Sunnyvale, CA (US);
Werner K. Goetz, Palo Alto, CA (US);
Linda T. Romano, Sunnyvale, CA (US);
Philips Lumilieds Lighting Co, LLC, San Jose, CA (US);
Abstract
In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant acorresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant acorresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(a−a)|/a. In some embodiments, the strain in the light emitting layer is less than 1%.