The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2009

Filed:

Jun. 02, 2006
Applicants:

Donald W. Berrian, Topsfield, MA (US);

John W. Vanderpot, Boxford, MA (US);

Inventors:

Donald W. Berrian, Topsfield, MA (US);

John W. Vanderpot, Boxford, MA (US);

Assignee:

Axcelis Technologies, Inc., Beverly, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K 5/10 (2006.01); H01J 37/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A system and method for mitigating contamination in an ion implantation system is provided. The system comprises an ion source, a power supply operable to supply power to a filament and mirror electrode of the ion source, a workpiece handling system, and a controller, wherein the ion source is selectively tunable via the controller to provide rapid control of a formation of an ion beam. The controller is operable to selectively rapidly control power to the ion source, therein modulating a power of the ion beam between an implantation power and a minimal power in less than approximately 20 microseconds based, at least in part, to a signal associated with a workpiece position. Control of the ion source therefore mitigates particle contamination in the ion implantation system by minimizing an amount of time at which the ion beam is at the implantation current.


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