The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2009

Filed:

Mar. 29, 2007
Applicants:

Gerard M. Schmid, Austin, TX (US);

Nicholas a Stacey, Austin, TX (US);

Douglas J. Resnick, Austin, TX (US);

Ronald D. Voisin, Fremont, CA (US);

Lawrence J. Myron, Allen, TX (US);

Inventors:

Gerard M. Schmid, Austin, TX (US);

Nicholas A Stacey, Austin, TX (US);

Douglas J. Resnick, Austin, TX (US);

Ronald D. Voisin, Fremont, CA (US);

Lawrence J. Myron, Allen, TX (US);

Assignee:

Molecular Imprints, Inc., Austin, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process that enables coplanarization of the structures that have been created in multiple independent etch steps. The various etches are performed independently by selectively exposing only certain patterns to particular etching conditions. After these structures have been created, it is possible that the various structures will exist at different planes/elevations relative to the template surface. The elevations of the various structures may be adjusted independently by selectively exposing 'higher' structures to an anisotropic etch that reduces the overall elevation of the structures, while preserving the structural topography.


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