The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Nov. 15, 2006
Applicants:
Hyun-woo Lee, Veldhoven, NL;
Sami Musa, Veldhoven, NL;
Inventors:
Hyun-Woo Lee, Veldhoven, NL;
Sami Musa, Veldhoven, NL;
Assignee:
ASML Netherlands B.V., Veldhoven, NL;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
A system and method for determining parameters such as critical dimension of a patterned structure and best focus condition of a lithographic apparatus, based on measurement of the intensity of a non-zero order of light diffracted from an experimental structure. The experimental structure includes a first array of lines and partially filled spaces having a period longer than the wavelength of the diffracted light. The experimental structure also includes a second array of lines and spaces, where the second array of lines and spaces comprise the partially filled spaces.