The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2009

Filed:

Mar. 24, 2005
Applicants:

Kun-cheng Huang, Puyah Township, TW;

Huan-chi Tseng, Hsinchu, TW;

Jhy-chen You, Hsinchu, TW;

Kuan-miao Liu, Shulin, TW;

Tsong-yuan Chen, Jhubei, TW;

Chih-yang Wang, Chiayi, TW;

Tin-lin Tsai, Tainan, TW;

Ssu-chia Huang, Hsinchu, TW;

Inventors:

Kun-Cheng Huang, Puyah Township, TW;

Huan-Chi Tseng, Hsinchu, TW;

Jhy-Chen You, Hsinchu, TW;

Kuan-Miao Liu, Shulin, TW;

Tsong-Yuan Chen, Jhubei, TW;

Chih-Yang Wang, Chiayi, TW;

Tin-Lin Tsai, Tainan, TW;

Ssu-Chia Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A dummy via design for a dual damascene structure has a dielectric layer on a substrate, a dual damascene structure filled with a conductive material and inlaid in the dielectric layer, and a dummy via structure filled with a non-conductive material and inlaid in the dielectric layer. The dummy via structure has at least two dummy vias filled with the non-conductive material and located adjacent to two sides of the dual damascene structure respectively.


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