The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Aug. 08, 2005
Heidi L. Greer, Essex Junction, VT (US);
Seong-dong Kim, Williston, VT (US);
Robert M. Rassel, Colchester, VT (US);
Kunal Vaed, Poughkeepsie, NY (US);
Heidi L. Greer, Essex Junction, VT (US);
Seong-Dong Kim, Williston, VT (US);
Robert M. Rassel, Colchester, VT (US);
Kunal Vaed, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A MOS varactor is formed having a gate electrode comprising at least two abutting oppositely doped regions shorted together, in which the two regions are implanted simultaneously with source/drain implants for first and second types of transistor; at least one contact to a lower electrode is also formed simultaneously with the source/drain implants for the first type of transistor; the varactor insulator is formed simultaneously with the gate insulator for one type of transistor; and the lower electrode is formed simultaneously with a well for the first type of transistor, so that no additional mask is required.