The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Feb. 16, 2007
Da Zhang, Austin, TX (US);
Veeraraghavan Dhandapani, Round Rock, TX (US);
Darren V. Goedeke, Pflugerville, TX (US);
Jill C. Hildreth, Austin, TX (US);
Da Zhang, Austin, TX (US);
Veeraraghavan Dhandapani, Round Rock, TX (US);
Darren V. Goedeke, Pflugerville, TX (US);
Jill C. Hildreth, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for forming a semiconductor device includes forming a recess in a source region and a recess in a drain region of the semiconductor device. The method further includes forming a first semiconductor material layer in the recess in the source region and a second semiconductor material layer in the recess in the drain region, wherein each of the first semiconductor material layer and the second semiconductor material layer are formed using a stressor material having a first ratio of an atomic concentration of a first element and an atomic concentration of a second element, wherein the first element is silicon and a first level of concentration of a doping material. The method further includes forming additional semiconductor material layers overlying the first semiconductor material layer and the second semiconductor material layer that have a different ratio of the atomic concentration of the first element and the second element.