The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Apr. 26, 2006
Jane P. Chang, Los Angeles, CA (US);
Trinh Tu Van, Portland, OR (US);
Tony Chiang, Campbell, CA (US);
Chandra Deshpandey, Fremont, CA (US);
Karl Lesser, San Jose, CA (US);
Jane P. Chang, Los Angeles, CA (US);
Trinh Tu Van, Portland, OR (US);
Tony Chiang, Campbell, CA (US);
Chandra Deshpandey, Fremont, CA (US);
Karl Lesser, San Jose, CA (US);
The Regents of the Univesity of California, Los Angeles, CA (US);
Abstract
The invention relates to methods for producing doped thin layers on substrates comprising the steps of depositing a dopant precursor on the substrate via an atomic layer deposition technique; and exposing the deposited dopant precursor to radicals. The methods can further comprise depositing a compound adjacent the dopant metal via an atomic layer deposition technique; and exposing the deposited compound to radicals, thereby providing a host. The invention relates to articles comprising approximately atomically thin layers of metals or metal oxides doped with at least one different metal or metal oxide. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.