The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Jul. 05, 2006
Pierre Rayssac, Legal Representative, Grenoble, FR;
Gisele Rayssac, Legal Representative, Grenoble, FR;
Takeshi Akatsu, St. Nazaire les Eymes, FR;
Pierre Rayssac, legal representative, Grenoble, FR;
Gisele Rayssac, legal representative, Grenoble, FR;
Takeshi Akatsu, St. Nazaire les Eymes, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
The invention relates to a method of fabricating a release substrate produced from semiconductor materials, the method comprising creating a reversible connection between two substrate release layers characterized in that the reversible connection is formed by a connecting layer produced using a first material as the basis, the connecting layer further comprising a nanoparticle concentrating zone of a second material disposed to facilitate release of the substrate, the first and second materials being selected to maintain the bonding energy of the reversible connection substantially constant even when the substrate is exposed to heat treatment.