The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2009

Filed:

Nov. 02, 2005
Applicants:

Isamu Asano, Tokyo, JP;

Tyler A. Lowrey, Rochester Hills, MI (US);

Inventors:

Isamu Asano, Tokyo, JP;

Tyler A. Lowrey, Rochester Hills, MI (US);

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory element includes a bottom electrode, a bit lineprovided on the bottom electrode, and a recording layercontaining phase change material connected between the bottom electrodeand the bit line. In accordance with this invention, the bit lineis in contact with a growth initiation surfaceof the recording layer. This structure can be obtained by forming the bit linebefore the recording layer, resulting in a three-dimensional structure. This decreases the area of contact between the recording layerand the bit line, decreasing heat dissipation to the bit linewithout increasing the thickness of the recording layer. With this three-dimensional structure, moreover, there is no top electrode between the bit lineand the recording layer, keeping down the complexity of the fabrication process.


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