The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Jan. 10, 2007
Applicants:
Shao-ta Hsu, Tai-Nan, TW;
Neng-kuo Chen, Hsin-Chu, TW;
Teng-chun Tsai, Hsin-Chu, TW;
Inventors:
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for filling silicon oxide materials into a trench includes providing a substrate having a plurality of trenches, performing a first deposition process to form a first silicon oxide layer in the trenches, and performing a second deposition process to form a second silicon oxide layer in the trenches. The reactant gas of the first deposition process has a first O/TEOS flow ratio larger than a second O/TEOS flow ratio of the reactant gas of the second deposition process.