The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Mar. 18, 2005
Applicants:
Sung-ho Han, Seoul, KR;
Rak-hwan Kim, Gyeonggi-do, KR;
Kyung-in Choi, Seoul, KR;
Sang-woo Lee, Seoul, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Inventors:
Sung-ho Han, Seoul, KR;
Rak-hwan Kim, Gyeonggi-do, KR;
Kyung-in Choi, Seoul, KR;
Sang-woo Lee, Seoul, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A metal layer can be formed in an integrated circuit by forming a metal-nitride layer in a recess including a first concentration of nitrogen in the metal-nitride layer at a bottom of the recess that is less than a second concentration of nitrogen in the metal-nitride layer proximate an opening of the recess. A metal layer can be formed on the metal-nitride layer including in the recess.