The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
May. 02, 2007
Applicant:
Henry Wei-ming Chung, Hsinchu, TW;
Inventor:
Henry Wei-Ming Chung, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/822 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a self-aligned contact between two MOS transistors is described. The method supports the use of low-resistivity silicides for the formation of contacts in nanometer applications that employ polycide techniques. Silicon nitride and photoresist material act as dual masks in the formation of the self-aligned contact.