The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2009

Filed:

Jun. 10, 2005
Applicants:

Motoaki Iwabuchi, Joetsu, JP;

Yoshitaka Hamada, Joetsu, JP;

Tsutomu Ogihara, Joetsu, JP;

Takeshi Asano, Joetsu, JP;

Takafumi Ueda, Joetsu, JP;

Dirk Pfeiffer, New York, NY (US);

Inventors:

Motoaki Iwabuchi, Joetsu, JP;

Yoshitaka Hamada, Joetsu, JP;

Tsutomu Ogihara, Joetsu, JP;

Takeshi Asano, Joetsu, JP;

Takafumi Ueda, Joetsu, JP;

Dirk Pfeiffer, New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/039 (2006.01); G03F 7/095 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a material for an antireflective film characterized by high etching selectivity with respect to a resist, that is, which has a fast etching speed when compared to the resist, and in addition, can be removed without damage to a film which is to be processed. The present invention also provides a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film-forming composition, and a pattern formation method that uses this antireflective film as a hard mask, and a pattern formation method that uses this antireflective film as a hard mask for processing the substrate. The present invention also provides an antireflective film-forming composition comprising an organic solvent, a cross linking agent, and a polymer comprising a light absorbing group obtained by hydrolyzing and condensing more than one type of silicon compound, a crosslinking group and a non-crosslinking group.


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