The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2009

Filed:

Mar. 09, 2005
Applicants:

William Volk, San Francisco, CA (US);

Laurence Wagner, McKinney, TX (US);

Inventors:

William Volk, San Francisco, CA (US);

Laurence Wagner, McKinney, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Photolithographic masks and nano-imprint lithography masks with calcium fluoride substrates are disclosed. A photolithographic mask has a calcium fluoride substrate having a surface, a patterned layer disposed on the surface, and a polymer layer forming a pellicle that covers the patterned layer. A mask for nano-imprint lithography has a calcium fluoride substrate with a surface and a nano-imprint lithography pattern formed on the surface. Such masks can be used in a method for reducing the effects of hydration during lithography. In the method a layer of photoresist is formed on a substrate. A mask having a substrate made of calcium fluoride with a patterned surface is disposed proximate the layer of photoresist. The photoresist is exposed to radiation that passes through the mask. The radiation is characterized by a vacuum wavelength between about 190 nm and about 450 nm. Calcium fluoride masks can also be used to reduce the effects of hydration nano-imprint lithography.


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