The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Apr. 25, 2007
Wataru Saito, Kanagawa-ken, JP;
Akira Yoshioka, Kanagawa-ken, JP;
Hidetoshi Fujimoto, Kanagawa-ken, JP;
Yasunobu Saito, Tokyo, JP;
Takao Noda, Kanagawa-ken, JP;
Tomohiro Nitta, Kanagawa-ken, JP;
Yorito Kakiuchi, Kanagawa-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Akira Yoshioka, Kanagawa-ken, JP;
Hidetoshi Fujimoto, Kanagawa-ken, JP;
Yasunobu Saito, Tokyo, JP;
Takao Noda, Kanagawa-ken, JP;
Tomohiro Nitta, Kanagawa-ken, JP;
Yorito Kakiuchi, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nitride semiconductor device includes: a conductive substrate; a first semiconductor layer provided on the substrate; a second semiconductor layer provided on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a first main electrode connected to the third semiconductor layer; a second main electrode connected to the third semiconductor layer; and a control electrode provided on the third semiconductor layer. The first semiconductor layer is made of AlGaN (0≦X≦1) of a first conductivity type. The second semiconductor layer is made of a first nitride semiconductor. The third semiconductor layer is made of a second nitride semiconductor which is undoped or of n-type and has a wider bandgap than the first nitride semiconductor.