The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Feb. 09, 2005
Atsushi Matsushita, Isahaya, JP;
Isao Matsumoto, Nagaokakyo, JP;
Kazuaki Inukai, Hamamatsu, JP;
Hong Jae Shin, Seoul, KR;
Naofumi Ohashi, Tokyo, JP;
Shuji Sone, Tama, JP;
Kaori Misawa, Kaizu-gun, JP;
Atsushi Matsushita, Isahaya, JP;
Isao Matsumoto, Nagaokakyo, JP;
Kazuaki Inukai, Hamamatsu, JP;
Hong Jae Shin, Seoul, KR;
Naofumi Ohashi, Tokyo, JP;
Shuji Sone, Tama, JP;
Kaori Misawa, Kaizu-gun, JP;
Sony Corporation, Tokyo, JP;
Abstract
Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection insulating film, a MSQ film, and a silicon oxide film composing an ILD are RIE dry etched sequentially, and a via is formed on the surface of a substrate for processing reaching the diffusion layer on the substrate for processing. Subsequent process consists of; removing a modified layer formed on the substrate for processing surface because of prior etching using plasma gas by plasma excitation of NHgas, and another etching for complete removal of the resist mask by irradiation of hydrogen active species created by hydrogen gas and inert gas, of which example is helium gas or argon gas.