The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Apr. 04, 2005
Kouros Ghandehari, Santa Clara, CA (US);
Anna M. Minvielle, San Jose, CA (US);
Marina V. Plat, San Jose, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
Kouros Ghandehari, Santa Clara, CA (US);
Anna M. Minvielle, San Jose, CA (US);
Marina V. Plat, San Jose, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating which can include silicon oxynitride (SiON) and silicon rich nitride (SiRN).