The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Sep. 26, 2007
Kazuyoshi Yoshida, Tokyo, JP;
Kazuyoshi Yoshida, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A method of manufacturing semiconductor devices includes: preparing a semiconductor substrate over which a laminated structure including an insulating layer is formed; forming over the insulating layer a resist mask including a first opening and a second opening which is greater in width than the first opening; first etching using the resist mask to form a hole which corresponds to the first opening and penetrates the insulating layer and to form a first trench which corresponds to the second opening and is shallower than the hole; forming a deposition film so as to fill the hole; second etching to etch back the deposition film so that the insulating layer is exposed in the first trench and that the deposition film remains in the hole; and third etching using the resist mask and the remaining deposition film for masking to remove the insulating layer part exposed in the first trench so as to form a second trench penetrating the insulating layer.