The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Oct. 23, 2006
Applicants:
Masahiko Higashi, Tokyo, JP;
Satoshi Kume, Tokyo, JP;
Jiro Yugami, Tokyo, JP;
Shinichi Yamanari, Tokyo, JP;
Takahiro Maruyama, Tokyo, JP;
Itaru Kanno, Tokyo, JP;
Inventors:
Masahiko Higashi, Tokyo, JP;
Satoshi Kume, Tokyo, JP;
Jiro Yugami, Tokyo, JP;
Shinichi Yamanari, Tokyo, JP;
Takahiro Maruyama, Tokyo, JP;
Itaru Kanno, Tokyo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor device manufacturing method of the invention, a metal film, for forming a gate electrode, is formed on a gate insulating film. Subsequently, when the metal film is processed, part of the metal film is removed by a wet etching process using a given chemical liquid.