Ald methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates

Abstract

In some embodiments, the invention may include utilization of at least one iteration of an ALD pulse sequence that has the pulse subsets M-M-R- and M-(R-M-): where x is at least 2; where Mis a first metal-containing precursor comprising a first metal, Mis a second metal-containing precursor comprising a second metal different from the first metal, and R is a reactant which reacts with one or both of the first and second metals. The ALD pulse sequence forms material over a substrate, and such material includes the first and second metals. The hyphen between pulses means that the second pulse directly follows the first pulse, with the term 'directly follows' indicating that the second pulse either immediately follows the first pulse or that only a purge separates the first and second pulses.