The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2009

Filed:

Apr. 28, 2006
Applicants:

Cancheepuram V. Srividya, Boise, ID (US);

Noel Rocklein, Boise, ID (US);

John Vernon, Boise, ID (US);

Jeff Nelson, Boise, ID (US);

F. Daniel Gealy, Boise, ID (US);

David Korn, Boise, ID (US);

Inventors:

Cancheepuram V. Srividya, Boise, ID (US);

Noel Rocklein, Boise, ID (US);

John Vernon, Boise, ID (US);

Jeff Nelson, Boise, ID (US);

F. Daniel Gealy, Boise, ID (US);

David Korn, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
Abstract

In some embodiments, the invention may include utilization of at least one iteration of an ALD pulse sequence that has the pulse subsets M-M-R- and M-(R-M-): where x is at least 2; where Mis a first metal-containing precursor comprising a first metal, Mis a second metal-containing precursor comprising a second metal different from the first metal, and R is a reactant which reacts with one or both of the first and second metals. The ALD pulse sequence forms material over a substrate, and such material includes the first and second metals. The hyphen between pulses means that the second pulse directly follows the first pulse, with the term 'directly follows' indicating that the second pulse either immediately follows the first pulse or that only a purge separates the first and second pulses.


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