The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Jun. 14, 2006
David W. Abraham, Croton-on-Hudson, NY (US);
Stephen L. Brown, Carmel, NY (US);
Stuart P. Parkin, San Jose, CA (US);
Daniel Worledge, Cortlandt Manor, NY (US);
David W. Abraham, Croton-on-Hudson, NY (US);
Stephen L. Brown, Carmel, NY (US);
Stuart P. Parkin, San Jose, CA (US);
Daniel Worledge, Cortlandt Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device formed between a wordline and a bitline comprises a growth layer, an antiferromagnetic layer formed on the growth layer, a pinned layer formed on the antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, and a free layer formed on the tunnel barrier. The wordline and bitline are arranged substantially orthogonal to one another. The growth layer, in turn, comprises tantalum and has a thickness greater than about 75 Angstroms. Moreover, the pinned layer comprises one or more pinned ferromagnetic sublayers. The tunnel barrier comprises magnesium oxide. Finally, the free layer comprises two or more free ferromagnetic sublayers, each free ferromagnetic sublayer having a magnetic anisotropy axis that is oriented about 45 degrees from the wordline and bitline. The semiconductor device may comprise, for example, a magnetic tunnel junction for use in magnetoresistive random access memory (MRAM) circuitry.