The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2009

Filed:

Dec. 23, 2006
Applicants:

Jingang Wu, Shanghai, CN;

Fei Luo, Shanghai, CN;

Guanqie Gao, Shanghai, CN;

Cheng Yang, Shanghai, CN;

Inventors:

Jingang Wu, Shanghai, CN;

Fei Luo, Shanghai, CN;

Guanqie Gao, Shanghai, CN;

Cheng Yang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

System and method for direct etching. According to an embodiment, the present invention provides a method for manufacturing an integrated circuit device. The method includes a step for providing a substrate having a contact region, which is provided between a first word line and a second word line. The contact region has an overlying plug structure, which is provided within a thickness of a first dielectric layer. The first dielectric layer includes a portion overlying the plug structure. The first dielectric layer has a planarized surface region. The method also includes a step for forming a first line and a second line and a space provided between the first word line and the second world line. The space is provided within a region overlying the plug structure.


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