The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Aug. 27, 2007
Han-sung Chen, Hsinchu, TW;
Su-chueh Lo, Miaoli, TW;
Chun-hsiung Hung, Hsinchu, TW;
Nai-ping Kuo, Hsinchu, TW;
Ming-chih Hsieh, Taipei, TW;
Wen-pin Tsai, Hsinchu, TW;
Han-Sung Chen, Hsinchu, TW;
Su-Chueh Lo, Miaoli, TW;
Chun-Hsiung Hung, Hsinchu, TW;
Nai-Ping Kuo, Hsinchu, TW;
Ming-Chih Hsieh, Taipei, TW;
Wen-Pin Tsai, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, Taiwan, CN;
Abstract
A method for detecting word line leakage in a memory device includes coupling a first plurality of word lines in the memory device to a voltage source while grounding a second plurality of word lines. Each of the second plurality of word lines is adjacent to a corresponding one of the first plurality of word lines. The method includes waiting for a period of time to allow the word lines to reach a predetermined read voltage level. The method also includes decoupling the first plurality of word lines from the voltage source and waiting for a second predetermined period of time to allow the first plurality of word lines to discharge. The method further includes sensing a current associated with the word lines, and comparing the current with a predetermined reference current which is selected for identifying a word line leakage condition associated with the first plurality of word lines.