The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Aug. 23, 2007
Atsushi Fujikawa, Tokyo, JP;
Hiromasa Noda, Tokyo, JP;
Atsushi Fujikawa, Tokyo, JP;
Hiromasa Noda, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A semiconductor device includes main power supply wirings VDD and VSS, an pseudo power supply wiring VDT, inverters connected between the pseudo power supply wiring VDT and the main power supply wiring VSS, and inverters connected between the main power supply wiring VDD and the main power supply wiring VSS. Between the main power supply wiring VDD and the pseudo power supply wiring VDT, an N-channel MOS transistor and a P-channel MOS transistor that are rendered a conductive state at the time of active are connected in parallel. According to the present invention, the transistors different in conductivity type are used in parallel, and thus, it becomes possible to reduce power consumption at the time of standby while suppressing a decrease in switching speed from a standby state to an active state.