The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Nov. 14, 2002
Ziyun Wang, New Milford, CT (US);
Chongying Xu, New Milford, CT (US);
Ravi K. Laxman, San Jose, CA (US);
Thomas H. Baum, New Fairfield, CT (US);
Bryan Hendrix, Danbury, CT (US);
Jeffrey Roeder, Brookfield, CT (US);
Ziyun Wang, New Milford, CT (US);
Chongying Xu, New Milford, CT (US);
Ravi K. Laxman, San Jose, CA (US);
Thomas H. Baum, New Fairfield, CT (US);
Bryan Hendrix, Danbury, CT (US);
Jeffrey Roeder, Brookfield, CT (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (SiN), siliconoxynitride (SiON) and/or silicon dioxide (SiO). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.