The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Jul. 26, 2006
Applicants:
Thomas Nirschl, Essex Junction, VT (US);
Alexander Olbrich, Hohenbrunn, DE;
Martin Ostermayr, Feldkirchen, DE;
Inventors:
Thomas Nirschl, Essex Junction, VT (US);
Alexander Olbrich, Hohenbrunn, DE;
Martin Ostermayr, Feldkirchen, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor memory cell and production method provides a storage capacitor connected to a selection transistor. The storage capacitor is formed as a contact hole capacitor in at least one contact hole for a source or drain region. Such a semiconductor memory cell can be produced cost-effectively and allows a high integration density.